Description
- Type Designator: IRF1405
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation (Pd): 330 W
- Maximum Drain-Source Voltage |Vds|: 55 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
- Maximum Drain Current |Id|: 169 A
- Maximum Junction Temperature (Tj): 175 °C
- Total Gate Charge (Qg): 170 nC
- Rise Time (tr): 190 nS
- Drain-Source Capacitance (Cd): 1210 pF
- Maximum Drain-Source On-State Resistance (Rds): 0.0053 Ohm
IRF1405 Transistor Equivalent Substitute
- IRF1405PBF
- IRFB3077
- IRFB3077G
- IRFB4110
- IRFB4110G
- IRFB4110Q
- IRLB3036
- IRLB3036G
- IRLB3036GPBF
- IRLB3036PBF
- IRLB4030
- IRLB4030PBF
